Amorphous Silicon Dioxide Formula: SiO2 Low Loss

Submitted by (Dr) Marie Cheynet, May 26, 2005.

Source / Purity: 4nm amorphous thermal layer on [110] Si substrate

Author Comments: Analyst: M. Cheynet. Temperature: Room.

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Spectrum Metadata

Specimen Name
Tecnai F20
Spectrum Type
Low Loss
Specimen Formula
SiO2
Data Range
-8.23 eV - 92 eV
Source and Purity
4nm amorphous thermal layer on [110] Si substrate
Keywords
imported from old site
Alternative URL
Old EELS DB
Microscope Name / Model
Tecnai F20
Gun Type
feg Schottky
Incident Beam Energy
200 kV
Resolution
0.7 eV
Dispersion
0.1 eV/pixel
Acquisition Mode
STEM
Convergence Semi-angle
13 mrad
Collection Semi-angle
1.2 mrad
Probe Size
0.3 nm2
Integration Time
1 secs
Number of Readouts
5
Detector
Parallel: GIF
Dark Current Correction
Yes
Gain Variation Spectrum
Yes
Relative Thickness
0.35 t/λ
Reference
Structural and chemical analysis of a model Si-SiO2 interface using spatially resolved electron energy-loss spectroscopy M.C. Cheynet, T. Epicier Philosophical Magazine84, 17, (2004), 1753

The EELS Database is funded by the CEMES and IMN laboratories, by the European microscopy network ESTEEM 2, by the French microscopy network METSA and by the French microscopy society  SFµ

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