Gallium Nitride Formula: GaN Low Loss

Submitted by (Dr) Marie Cheynet, May 26, 2005.

Source / Purity: Heterostructures AlN-GaN

Author Comments: Analyst: M. Cheynet. Temperature: Room.

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Spectrum Metadata

Specimen Name
Tecnai F20
Spectrum Type
Low Loss
Specimen Formula
GaN
Data Range
-7.07 eV - 92.3 eV
Source and Purity
heterostructures AlN-GaN
Keywords
imported from old site
Alternative URL
Old EELS DB
Microscope Name / Model
Tecnai F20
Gun Type
feg Schottky
Incident Beam Energy
200 kV
Resolution
1 eV
Dispersion
0.1 eV/pixel
Acquisition Mode
STEM
Convergence Semi-angle
13.5 mrad
Collection Semi-angle
1.2 mrad
Probe Size
1 nm2
Integration Time
1 secs
Number of Readouts
5
Detector
Parallel: GIF
Dark Current Correction
Yes
Gain Variation Spectrum
Yes
Relative Thickness
0.6 t/λ